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High Reliability Silicon MEMS Oscillator MICROCHIP DSC1001DI1-0080000T CMOS Technology Rugged Design

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High Reliability Silicon MEMS Oscillator MICROCHIP DSC1001DI1-0080000T CMOS Technology Rugged Design

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Voltage - Supply : 1.8V~3.3V

Frequency Stability : ±50ppm

Description : 1.8V~3.3V SMD2520-4P Oscillators RoHS

Mfr. Part # : DSC1001DI1-008.0000T

Model Number : DSC1001DI1-008.0000T

Package : SMD2520-4P

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Product Overview

The DSC1001/3/4 is a silicon MEMS-based CMOS oscillator family offering excellent jitter and stability over a wide range of supply voltages and temperatures. Its crystal-less design provides high reliability, making it suitable for rugged, industrial, and portable applications. Available in industry-standard packages, it offers a pin-for-pin "drop-in" replacement for standard crystal oscillators, enabling longer battery life and reduced power consumption in a compact, cost-effective package.

Product Attributes

  • Brand: Microchip Technology Inc.
  • Material: Silicon MEMS
  • Certifications: Pb Free, RoHS, Reach SVHC Compliant, AEC-Q100 Reliability Qualified

Technical Specifications

ParameterSymbolMinTypMaxUnitsConditions
Frequency RangeF01150MHzSingle Frequency
f10ppmFrequency Tolerance (Includes initial tolerance, temperature, and power supply voltage)
f20ppmFrequency Tolerance
f25ppmFrequency Tolerance
Agingf50ppm1 year @ +25C
Operating VoltageVDD1.73.6VRecommended Operating Conditions
VDD1.83.3VElectrical Characteristics
VIN-0.3VDD + 0.3VAbsolute Maximum Ratings
Operating Temperature RangeTA40+105COrdering Option L
TA40+85COrdering Option I
TA20+70COrdering Option E
Supply Current, StandbyIDD15AMax. @ T = +25C
IDD6.06.5mAOperating @ 1 MHz, VDD = 3.3V, CL = 0 pF, RL = , T = +25C
Output Startup TimetSU1.01.3msT = +25C
tSUmstSU and tEN (after EN is asserted) are identical values.
Output Disable TimetDA20100ns
Output Duty CycleSYM4555%
Input Logic Level HighVIH0.75 x VDDV
Input Logic Level LowVIL0.25 x VDDVVDD = 1.8V
Output Logic Level HighVOH0.8 x VDDV6 mA, DSC1004, CL = 40 pF
VOH0.8 x VDDV6 mA, DSC1003, CL = 25 pF
VOH0.8 x VDDV4 mA, DSC1001, CL = 15 pF
VOH0.9 x VDDV8 mA, DSC1004, CL = 40 pF, VDD = 3.3V
Output Logic Level LowVOL0.2 x VDDV6 mA, DSC1004, CL = 40 pF
VOL0.2 x VDDV6 mA, DSC1003, CL = 25 pF
VOL0.2 x VDDV4 mA, DSC1001, CL = 15 pF
VOL0.1 x VDDV8 mA, DSC1004, CL = 40 pF, VDD = 3.3V
Output Transition Rise TimetR1.43.0nsDSC1001, CL = 15 pF, T = +25C, 20% to 80%
tR1.53.0nsDSC1003, CL = 25 pF, T = +25C, 20% to 80%
tR1.83.0nsDSC1004, C2 = 40 pF, T = +25C, 20% to 80%
Output Transition Fall TimetF1.03.0nsDSC1001, CL = 15 pF, T = +25C, 20% to 80%
tF1.13.0nsDSC1003, CL = 25 pF, T = +25C, 20% to 80%
tF1.23.0nsDSC1004, C2 = 40 pF, T = +25C, 20% to 80%
Jitter, Max. Cycle-to-CycleJCC60psf = 100 MHz (Note 2)
JCC50psf = 100 MHz (Note 2), VDD = 3.3V
Period JitterJP1015psRMSf = 100 MHz (Note 2)
JP510psRMSf = 100 MHz (Note 2), VDD = 3.3V
ESD Protection4kV HBM
ESD Protection200V MM
ESD Protection1.5kV CDM
Output LoadZLR > 10 k, C 15pFRecommended Operating Conditions

2412061756_MICROCHIP-DSC1001DI1-008-0000T_C1987351.pdf


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